High power TVS
Wafer NO.
Type
DIE Size（um）
Scribe lane
Wafer size(inch)
GDPW
Top Metal
PAD Open
Wafer thickness
Back side metal
Operating Voltage
VBR（1mA）
CAP(L-G)
IPP(L-G)
Vc(Max)(L-G)
芯片名稱
類型
單科芯片大小
劃片槽
芯片尺寸
數量/片
頂層金屬
焊盤尺寸
減薄厚度
背面金屬
工作電壓
擊穿電壓
電容
電流（8/20）
箝位電壓
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TX211A單向/單通道/大功率1750*135050670004um ALSICU1360*1230150umTiNiAg22V23.2-24.8V900pF130A45V
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TX210A單向/單通道/大功率1750*135050670004um ALSICU1360*1230150umTiNiAg18V18.6-20.6V1100pF180A40V
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TX212A單向/單通道/大功率1750*135050670004um ALSICU1360*1230150umTiNiAg15V16-18V1250pF205A35V
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TX200A單向/單通道/大功率1750*135050670004um ALSICU1360*1230150umTiNiAg12V12.6-15.8V1600pF245A30V
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TX134G單向/單通道/大功率1600x120050557004um ALSICU1525*1125um220umTiNiAg24V26.0-28.5V2500pF180A35V
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TX133A單向/單通道/大功率1600x1200508150004um ALSICU1525*1125um150umTiNiAg24V25.5-27V2850pF130A40V
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TX132A單向/單通道/大功率1600x1200508150004um ALSICU1525*1125um150umTiNiAg7V7.5-9.0V2700pF310A20V
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TX131A單向/單通道/大功率1600x1200508150004um ALSICU1525*1125um150umTiNiAg5V6-8V2900pF320A18V
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TX130A單向/單通道/大功率1600x1200508150004um ALSICU1525*1125um150umTiNiAg4.5V5.2-7.2V3700pF300A16V
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TX125A雙向/單通道/大功率860x960508350004um ALSICU770*870um150umTiNiAg4.5V5.1-8V500pF135A10V
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TX141A單向/單通道/大功率820*820406230004um ALSICU740*740um150umTiNiAg5V5.8-8V450pF170A13V
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TX129A雙向/單通道/大功率810*810508440004um ALSICU746*746um150umTiNiAg5V5.5-8V450pF150A16V
